IBM and its joint development partners – several tech companies (AMD, Freescale, STMicroelectronics, Toshiba and the College of Nanoscale Science and Engineering (CNSE)) – announced the first working static random access memory (SRAM) for the 22 nanometer (nm) technology node.

The researchers utilized high-NA immersion lithography to print the aggressive pattern dimensions and densities and fabricated the parts in its a state-of-the-art 300mm semiconductor research environment. The SRAM cell utilizes a conventional six-transistor design and has an area of 0.1um2. For comparison Intel 45nm cell has an area of 0.346um2. In any case 22 nanometer chips are two generation away in chips manufacturing.

IBM also has interesting solution for next generation of 32 nm chips. For that purpose IBM and its partners are in development with their leading 32 nm high-K metal gate technology that no other company or consortium can match.

“We are working at the ultimate edge of what is possible — progressing toward advanced, next-generation semiconductor technologies,” said Dr. T.C. Chen, vice president of Science and Technology, IBM Research. “This new development is a critical achievement in the pursuit to continually drive miniaturization in microelectronics.”

Tags | Computers, Hardware, Storage, Technology News